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[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate
Shinohara, Keisuke, Ha, Wonill, Rodwell, Mark J.W., Brar, BerinderYear:
2007
Language:
english
Pages:
4
DOI:
10.1109/iciprm.2007.380678
File:
PDF, 1.14 MB
english, 2007