Quantitative distribution analysis of dopant elements in...

Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling

G. Stingeder, M. Grasserbauer, E. Guerrero, H. Pötzl, R. Tielert
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Volume:
314
Year:
1983
Language:
english
Pages:
5
DOI:
10.1007/bf00516826
File:
PDF, 396 KB
english, 1983
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