Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modelling
G. Stingeder, M. Grasserbauer, E. Guerrero, H. Pötzl, R. TielertVolume:
314
Year:
1983
Language:
english
Pages:
5
DOI:
10.1007/bf00516826
File:
PDF, 396 KB
english, 1983