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Progression of an excess-carrier pulse in Zn-compensated P-doped Si exposed to an electric field close to the recombination-wave threshold
B. V. Kornilov, V. V. PrivezentsevVolume:
35
Language:
english
Pages:
7
DOI:
10.1134/s1063739706020041
Date:
March, 2006
File:
PDF, 306 KB
english, 2006