Growth behaviors of GaN/Si heteroepitaxy with various...

Metals and Materials International 2008 / 12 Vol. 14; Iss. 6

Growth behaviors of GaN/Si heteroepitaxy with various terrace widths grown by the LEPS method

Eun-A Ko, Dong-Wook Kim, Heon-Song, Kannappan Santhakumar, Jin-Soo Kim, In-Hwan Lee, Byung-Joon Baek, Cheul-Ro Lee
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
14
Language:
english
Pages:
6
DOI:
10.3365/met.mat.2008.12.753
Date:
December, 2008
File:
PDF, 771 KB
english, 2008
Conversion to is in progress
Conversion to is failed