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Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence
Allenspach, M., Mouret, I., Titus, J.L., Wheatley, C.F., Pease, R.L., Brews, J.R., Schrimpf, R.D., Galloway, K.F.Volume:
42
Year:
1995
Language:
english
Pages:
6
DOI:
10.1109/23.489234
File:
PDF, 630 KB
english, 1995