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Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation
Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.Volume:
28
Year:
2007
Language:
english
Pages:
3
DOI:
10.1109/led.2007.909978
File:
PDF, 178 KB
english, 2007