Effect of excess vacancy concentration on As and Sb doping in Si
Dalponte, M, Adam, M C, Boudinov, H I, Goncharova, L V, Feng, T, Garfunkel, E, Gustafsson, TVolume:
42
Year:
2009
Language:
english
DOI:
10.1088/0022-3727/42/16/165106
File:
PDF, 503 KB
english, 2009