[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design
Komoda, T., Oishi, A., Sanuki, T., Kasai, K., Yoshimura, H., Ohno, K., lwai, M., Saito, M., Matsuoka, F., Nagashima, N., Noguchi, T.Year:
2004
Language:
english
Pages:
4
DOI:
10.1109/iedm.2004.1419113
File:
PDF, 255 KB
english, 2004