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[IEEE 2012 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2012.02.19-2012.02.23)] 2012 IEEE International Solid-State Circuits Conference - A ±0.4°C (3σ) −70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2
van Vroonhoven, Caspar, D'Aquino, Dan, Makinwa, KofiYear:
2012
Language:
english
Pages:
3
DOI:
10.1109/isscc.2012.6176976
File:
PDF, 297 KB
english, 2012