128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode
Li, Yan, Lee, Seungpil, Oowada, Ken, Nguyen, Hao, Nguyen, Qui, Mokhlesi, Nima, Hsu, Cynthia, Li, Jason, Ramachandra, Venky, Kamei, TeruhikoLanguage:
english
Pages:
2
DOI:
10.1109/isscc.2012.6177080
File:
PDF, 277 KB
english