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Advanced Floating Island and Thick Bottom Oxide Trench Gate MOSFET (FITMOS) with reduced RonA during AC operation by passive hole gate and improved BVdss RonA trade-off by elliptical floating island
Takaya, Hidefumi, Miyagi, Kyosuke, Hamada, KimimoriLanguage:
english
Pages:
4
DOI:
10.1109/ispsd.2007.4294966
File:
PDF, 1.42 MB
english