Double-Epilayer Structure for Low Drain Voltage Rating...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 7

Double-Epilayer Structure for Low Drain Voltage Rating n-Channel Power Trench MOSFET Devices

Minhua Li, Crellin, A., Ihsiu Ho, Qi Wang
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Volume:
55
Year:
2008
Language:
english
Pages:
7
DOI:
10.1109/ted.2008.923523
File:
PDF, 721 KB
english, 2008
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