![](/img/cover-not-exists.png)
[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low forward voltage drop 4500 V trench IGBT
Nitta, T., Uenishi, A., Minato, T., Kusunoki, S., Takahashi, T., Nakamura, H., Nakamura, K., Aono, S., Harada, M.Year:
1998
Language:
english
Pages:
4
DOI:
10.1109/ispsd.1998.702625
File:
PDF, 412 KB
english, 1998