1.2 kV trench insulated gate bipolar transistors (IGBT's)...

IEEE Electron Device Letters 1999 Vol. 20; Iss. 8

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Udrea, F., Chan, S.S.M., Thomson, J., Trajkovic, T., Waind, P.R., Amaratunga, G.A.J., Crees, D.E.
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Volume:
20
Year:
1999
Language:
english
Pages:
3
DOI:
10.1109/55.778166
File:
PDF, 702 KB
english, 1999
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