[IEEE 5th IEEE Conference on Nanotechnology, 2005. - Nagoya, Japan (July 11-15, 2005)] 5th IEEE Conference on Nanotechnology, 2005. - Numerical 2D Simulation of surface states effects in AlGaN/GaN HEMT and GaN MESFET devices
Tirado, J.M., Sanchez de Rojas, J.L., Izpura, J.I.Year:
2005
Language:
english
Pages:
2
DOI:
10.1109/nano.2005.1500818
File:
PDF, 444 KB
english, 2005