Improved three-step de-embedding method to accurately...

IEEE Transactions on Electron Devices 2001 Vol. 48; Iss. 4

Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures

Vandamme, E.P., Schreurs, D.M.M.-P., Van Dinther, G.
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Volume:
48
Year:
2001
Language:
english
Pages:
6
DOI:
10.1109/16.915712
File:
PDF, 144 KB
english, 2001
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