Reliability issues of Gallium Nitride High Electron...

International Journal of Microwave and Wireless Technologies 2010 Vol. 2; Iss. 1

Reliability issues of Gallium Nitride High Electron Mobility Transistors

Meneghesso, Gaudenzio, Meneghini, Matteo, Tazzoli, Augusto, Ronchi, Nicolo', Stocco, Antonio, Chini, Alessandro, Zanoni, Enrico
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Volume:
2
Year:
2010
Language:
english
DOI:
10.1017/s1759078710000097
File:
PDF, 774 KB
english, 2010
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