[IEEE 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Atlanta, GA, USA (2011.10.9-2011.10.11)] 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Using saturated SiGe HBTs to realize ultra-low voltage/power X-band low noise amplifiers
Seth, Sachin, Poh, Chung Hang John, Thrivikraman, Tushar, Arora, Rajan, Cressler, John D.Year:
2011
Language:
english
Pages:
4
DOI:
10.1109/bctm.2011.6082758
File:
PDF, 658 KB
english, 2011