Extended Version of Carrier-Based Analytical Model to Account for the Doped Effect of Symmetric Double-Gate MOSFETs
Fu, Yue, Zhang, Lining, Zhou, Xingyue, He, JinVolume:
7
Year:
2010
Language:
english
Pages:
7
DOI:
10.1166/jctn.2010.1405
File:
PDF, 602 KB
english, 2010