[ Material Science and Material Properties for Infrared Optoelectronics - Kiev, Ukraine (Monday 28 September 1998)] - Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE
Venger, Evgenie F., Sadof'ev, Yu. G., Semenova, Galina N., Korsunskaya, Nadezhda E., Klad'ko, Vasily P., Embergenov, B., Dzhumaev, Berdishukur R., Borkovskaya, L. V., Semtsiv, Mikhail P., Sharibaev, MLanguage:
english
Pages:
7
DOI:
10.1117/12.368350
File:
PDF, 553 KB
english