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Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
Daniel, E.S., Cartoixa, X., Frensley, W.R., Ting, D.Z.-Y., McGill, T.C.Volume:
47
Year:
2000
Language:
english
Pages:
9
DOI:
10.1109/16.841240
File:
PDF, 150 KB
english, 2000