Trapping effects in GaN and SiC microwave FETs

Proceedings of the IEEE 2002 Vol. 90; Iss. 6

Trapping effects in GaN and SiC microwave FETs

Binari, S.C., Klein, P.B., Kazior, T.E.
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Volume:
90
Year:
2002
Language:
english
Pages:
11
DOI:
10.1109/jproc.2002.1021569
File:
PDF, 300 KB
english, 2002
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