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Quantitative Evaluation of Dopant Loss in 5–10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
Koh, Meishoku, Egusa, Kazuhiko, Furumoto, Hiroaki, Shirakata, Toru, Seo, Eisuke, Shibahara, Kentaro, Yokoyama, Shin, Hirose, MasatakaVolume:
38
Year:
1999
Language:
english
Pages:
5
DOI:
10.1143/jjap.38.2324
File:
PDF, 137 KB
english, 1999