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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Experimental and theoretical study of electrode effects in HfO2 based RRAM
Cagli, C., Buckley, J., Jousseaume, V., Cabout, T., Salaun, A., Grampeix, H., Nodin, J. F., Feldis, H., Persico, A., Cluzel, J., Lorenzi, P., Massari, L., Rao, R., Irrera, F., Aussenac, F., Carabasse,Year:
2011
Language:
english
Pages:
1
DOI:
10.1109/iedm.2011.6131634
File:
PDF, 1.23 MB
english, 2011