Evidence of arsenic‐induced surface defects in high‐dose...

Applied Physics Letters 1988 Vol. 53; Iss. 22

Evidence of arsenic‐induced surface defects in high‐dose As+‐implanted rapidly annealed silicon

Kumar, S. N., Chaussemy, G., Canut, B., Laugier, A.
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Volume:
53
Year:
1988
Language:
english
DOI:
10.1063/1.100414
File:
PDF, 636 KB
english, 1988
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