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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - A design concept for the low turn-off loss 4.5 kV trench IGBT
Takahashi, T., Uenishi, A., Kusunoki, S., Minato, T., Nakamura, H., Aono, S., Nakamura, K., Nitta, T., Harada, M.Year:
1998
Language:
english
Pages:
4
DOI:
10.1109/ispsd.1998.702627
File:
PDF, 374 KB
english, 1998