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Raman scattering by the E2h and A1(LO) phonons of InxGa1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
Oliva, R., Ibanez, J., Cusco, R., Kudrawiec, R., Serafinczuk, J., Martinez, O., Jimenez, J., Henini, M., Boney, C., Bensaoula, A., Artus, L.Volume:
111
Year:
2012
Language:
english
DOI:
10.1063/1.3693579
File:
PDF, 732 KB
english, 2012