Growth mechanism of thin silicon oxide films on Si(100)...

Physical Review B 1995 Vol. 52; Iss. 3

Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering

Gusev, E., Lu, H., Gustafsson, T., Garfunkel, E.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
52
Year:
1995
Language:
english
Pages:
17
DOI:
10.1103/physrevb.52.1759
File:
PDF, 851 KB
english, 1995
Conversion to is in progress
Conversion to is failed