[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - 650 V 3.1 mΩcm2 GaN-based monolithic bidirectional switch using normally-off gate injection transistor
Morita, Tatsuo, Yanagihara, Manabu, Ishida, Hidetoshi, Hikita, Masahiro, Kaibara, Kazuhiro, Matsuo, Hisayoshi, Uemoto, Yasuhiro, Ueda, Tetsuzo, Tanaka, Tsuyoshi, Ueda, DaisukeYear:
2007
Language:
english
Pages:
4
DOI:
10.1109/iedm.2007.4419086
File:
PDF, 2.47 MB
english, 2007