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Improved method for determining inversion layer mobility of electrons in trench MOSFETs
van den Heuvel, M.G.L., Hueting, R.J.E., Hijzen, E.A., Zandt, M.A.Ai.Volume:
151
Year:
2004
Language:
english
DOI:
10.1049/ip-cds:20040454
File:
PDF, 494 KB
english, 2004