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[IEEE 2009 10th International Symposium on Quality of Electronic Design (ISQED) - San Jose, CA, USA (2009.03.16-2009.03.18)] 2009 10th International Symposium on Quality of Electronic Design - Effect of NDD dosage on hot-carrier reliability in DMOS transistors

Chen, Jone F., Tian, Kuen-Shiuan, Chen, Shiang-Yu, Wu, Kuo-Ming, Liu, C. M.
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Year:
2009
Language:
english
Pages:
4
DOI:
10.1109/isqed.2009.4810298
File:
PDF, 340 KB
english, 2009
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