[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter
Matsudai, T., Tsukuda, M., Umekawa, S., Tanaka, M., Nakagawa, A.Year:
2003
Language:
english
Pages:
4
DOI:
10.1109/ispsd.2003.1225234
File:
PDF, 235 KB
english, 2003