Metal–Organic chemical vapour deposition (mocvd) growth utilising cu(acac)2 (acac pentane-3, 5-dionato) as a source for copper-containing materials: Influence of carrier gas on surface morphology
William S. Rees Jr., Celia R. CaballeroVolume:
1
Year:
1992
Language:
english
Pages:
6
DOI:
10.1002/amo.860010203
File:
PDF, 680 KB
english, 1992