Peculiarities of silicon carbide crystal growth under the...

Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer

S. K. Lilov, I. Y. Yanchev
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Volume:
1
Year:
1992
Language:
english
Pages:
5
DOI:
10.1002/amo.860010407
File:
PDF, 377 KB
english, 1992
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