Analysis of parasitic resistance effects in MOS LSI

Analysis of parasitic resistance effects in MOS LSI

Kenji Anami, Masahiko Yoshimoto, Hirofumi Shinohara, Osamu Tomisawa, Takao Nakano
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Volume:
66
Year:
1983
Language:
english
Pages:
8
DOI:
10.1002/ecja.4400661013
File:
PDF, 508 KB
english, 1983
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