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Tunnel-oxide breakdown characteristics of floating-gate-type EEPROM
Kazuo Sato, Yoshiki Fukuzaki, Shinichi Hatakeyama, Nobuyuki IkedaVolume:
72
Year:
1989
Language:
english
Pages:
8
DOI:
10.1002/ecjb.4420721001
File:
PDF, 530 KB
english, 1989