Fundamental properties of ultrathin SOI MOSFETs fabricated...

Electronics and Communications in Japan (Part II: Electronics)) 1990 Vol. 73; Iss. 4

Fundamental properties of ultrathin SOI MOSFETs fabricated by electron-beam anneal recrystallization

Makoto Yoshimi, Minoru Takahashi, Hiroaki Hazama, Shigeru Kambayashi, Kenji Natori
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Volume:
73
Year:
1990
Language:
english
Pages:
11
DOI:
10.1002/ecjb.4420730409
File:
PDF, 720 KB
english, 1990
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