Polycrystalline-silicon tfts fabricated at low temperature...

Electronics and Communications in Japan (Part II: Electronics)) 1993 Vol. 76; Iss. 10

Polycrystalline-silicon tfts fabricated at low temperature using ion doping technique

Atsushi Yoshinouchi, Akihiro Oda, Masataka Itoh, Tatsuo Morita, Shuhei Tsuchimoto
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Volume:
76
Year:
1993
Language:
english
Pages:
8
DOI:
10.1002/ecjb.4420761013
File:
PDF, 524 KB
english, 1993
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