Simulation of surface effects in planar GaAs MESFET...

Transactions on Emerging Telecommunications Technologies 1990 Vol. 1; Iss. 4

Simulation of surface effects in planar GaAs MESFET structures by use of a quasi-2D model

Wolfgang Brockerhoff, Michael Versteegen, Ralf Bertenburg, Ulrich Seiler, Klaus Heime
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Volume:
1
Year:
1990
Language:
english
Pages:
4
DOI:
10.1002/ett.4460010405
File:
PDF, 333 KB
english, 1990
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