Determination of the disorder profile in an ion-implanted...

Journal of Raman Spectroscopy 2012 Vol. 43; Iss. 7

Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy

F. Linez, A. Canizares, A. Gentils, G. Guimbretiere, P. Simon, M.-F. Barthe
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Volume:
43
Year:
2012
Language:
english
Pages:
1
DOI:
10.1002/jrs.3118
File:
PDF, 2.84 MB
english, 2012
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