Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100)...

Millimeter-wave in0.17Ga0.83 as power mesfets on GaAs(100) substrates

H. D. Shih, B. Kim, K. Bradshaw, H. Q. Tserng, M. Wurtele, W. M. Duncan, T. M. Moore
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Volume:
2
Year:
1989
Language:
english
Pages:
3
DOI:
10.1002/mop.4650020502
File:
PDF, 368 KB
english, 1989
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