Effect of H2O2 in passivation of n- and p-type 4H-SiC...

physica status solidi (a) 2012 Vol. 209; Iss. 4

Effect of H2O2 in passivation of n- and p-type 4H-SiC surfaces

Rodrigo Palmieri, Cláudio Radtke, Henri Boudinov, Eronides F. da Silva Jr
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Volume:
209
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssa.201100589
File:
PDF, 221 KB
english, 2012
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