Electrical properties of lateral p–n junction diodes...

physica status solidi (a) 2012 Vol. 209; Iss. 9

Electrical properties of lateral p–n junction diodes fabricated by selective growth of n+ diamond

Yuto Hoshino, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Takayuki Iwasaki, Mutsuko Hatano, Satoshi Yamasaki
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
209
Year:
2012
Language:
english
Pages:
1
DOI:
10.1002/pssa.201200053
File:
PDF, 845 KB
english, 2012
Conversion to is in progress
Conversion to is failed