A new dual-material (DM) gate design to improve the subthreshold behavior of deep submicron GaN-MESFETs
Nacereddine Lakhdar, Fayçal Djeffal, Zohir DibiVolume:
9
Year:
2012
Language:
english
Pages:
5
DOI:
10.1002/pssc.201100071
File:
PDF, 216 KB
english, 2012