N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs
D. J. Meyer, D. S. Katzer, R. Bass, N. Y. Garces, M. G. Ancona, D. A. Deen, D. F. Storm, S. C. BinariVolume:
9
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssc.201100431
File:
PDF, 284 KB
english, 2012