Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

physica status solidi (c) 2012 Vol. 9; Iss. 3-4

Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

Takuya Tabata, Jihyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano
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Volume:
9
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssc.201100446
File:
PDF, 548 KB
english, 2012
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