MOCVD growth and characterization of near-surface InGaN/GaN...

MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations

O. Svensk, S. Suihkonen, S. Sintonen, O. Kopylov, R. Shirazi, H. Lipsanen, M. Sopanen, B. E. Kardynal
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Volume:
9
Year:
2012
Language:
english
Pages:
1
DOI:
10.1002/pssc.201100703
File:
PDF, 207 KB
english, 2012
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