Gain mechanisms in field-free InGaN layers grown on...

physica status solidi (RRL) - Rapid Research Letters 2007 Vol. 1; Iss. 4

Gain mechanisms in field-free InGaN layers grown on sapphire and bulk GaN substrate

M. Dworzak, T. Stempel Pereira, M. Bügler, A. Hoffmann, G. Franssen, S. Grzanka, T. Suski, R. Czernecki, M. Leszczynski, I. Grzegory
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Volume:
1
Year:
2007
Language:
english
Pages:
3
DOI:
10.1002/pssr.200701037
File:
PDF, 249 KB
english, 2007
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