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HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam
V. Tokranov, S. L. Rumyantsev, M. S. Shur, R. Gaska, S. Oktyabrsky, R. Jain, N. PalaVolume:
1
Year:
2007
Language:
english
Pages:
3
DOI:
10.1002/pssr.200701136
File:
PDF, 215 KB
english, 2007