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High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
S. Arulkumaran, S. Vicknesh, G. I. Ng, Z. H. Liu, S. L. Selvaraj, T. EgawaVolume:
5
Year:
2011
Language:
english
Pages:
3
DOI:
10.1002/pssr.201004465
File:
PDF, 326 KB
english, 2011